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| RH1014M Quad Precision Operational Amplifier U WW W V+ +IN B -IN B DESCRIPTIO The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM124/LM148/OP-11/5156 pin configuration. Low offset voltage (300V max), low drift (2.5V/C), low offset current (1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifers in one package. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military applications. BUR -I CIRCUIT PACKAGE I FOR ATIO TOP VIEW OUT A -IN A 1 2 3 4 5 6 7 14 OUT D 13 -IN D 12 +IN D 11 V - 10 +IN C 9 8 -IN C OUT C 50k 20V +IN A 100 RH1014M OUT B 50k -20V RH1014M BI J PACKAGE 14-LEAD CERAMIC DIP TOP VIEW OUT A -IN A +IN A V+ +IN B -IN B OUT B 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT D -IN D +IN D V- +IN C -IN C OUT C W PACKAGE 14-LEAD FLATPAK GLASS SEALED U W U U ABSOLUTE AXI U RATI GS Supply Voltage ..................................................... 22V Differential Input Voltage ...................................... 30V Input Voltage .............. Equal to Positive Supply Voltage ................................ 5V Below Negative Supply Voltage Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range .............. - 55C to 125C Storage Temperature Range ................. - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C , LTC and LT are registered trademarks of Linear Technology Corporation. UU 1 RH1014M TABLE 1: ELECTRICAL CHARACTERISTICS VS = 15V, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 2 VCM = 0.1V VOS Temp VOS Time IOS IB en Average Tempco of Offset Voltage Long Term VOS Stability Input Offset Current 2 Input Bias Current 2 Input Noise Voltage Input Noise Voltage Density in RIN AVOL Input Noise Current Density Input Resistance Large-Signal Voltage Gain 0.1Hz to 10Hz f O = 10Hz f O = 1000Hz f O = 10Hz Differential Common Mode VO = 10V, RL 2k VO = 10V, RL 600 VO = 5mV to 4V, RL = 500 Input Voltage Range 2 1 1 1,2 1,2 CMRR PSRR Common-Mode Rejection Ratio Power Supply Rejection Ratio Channel Separation VOUT Output Voltage Swing VCM = 13.5V, -15V VCM = 13V, -14.9V VS = 2V to 18V VO = 10V, RL = 2k RL 2k Output Low, No Load Output Low, 600 to GND Output Low, ISINK = 1mA Output High, No Load Output High, 600 to GND SR IS Slew Rate Supply Current Per Amplifier 2 2 2 2 2 2 4.0 3.4 0.2 0.55 0.50 100 120 12.5 25 10 350 1 1 4 4 4 4 4 4 4 1 1 0.70 0.65 2,3 2,3 3.1 5,6 18 5,6 11.5 5,6 13.5 -15.0 3.5 0 97 1 94 97 2,3 2,3 1.2 0.5 1 1 70 4 4 4 0.25 5,6 0.55 24 22 0.07 2 1 0.5 10 10 30 50 1 1 1 1 20 20 45 120 2,3 2,3 2,3 2,3 CONDITIONS NOTES MIN TA = 25C TYP MAX 300 450 SUB- - 55C TA 125C SUBGROUP MIN TYP MAX GROUP 1 1 750 2.5 2 550 2,3 UNITS V V V V/C V/Mo nA nA nA nA VP-P nV/Hz nV/Hz pA/Hz M G V/V V/V V/V V V V V dB dB dB dB V mV mV mV V V V/s mA mA (Pre-Irradiation) 2 RH1014M TABLE 1A: ELECTRICAL CHARACTERISTICS VS = 15V, VCM = 0V, TA = 25C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 2 IOS Input Offset Current 2 IB Input Bias Current 2 Input Voltage Range 1 1 2 2 CMRR PSRR AVOL VOUT Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Maximum Output Voltage Swing VCM = 13V, - 15V VS = 10V to 18V RL 10k, VO = 10V RL 10k Output Low, No Load Output Low, 600 to GND Output Low, ISINK = 1mA Output High, No Load Output High, 600 to GND SR IS Slew Rate Supply Current RL 10k Per Amplifier 2 2 2 2 2 2 4.0 3.4 0.13 0.55 0.50 13.5 -15.0 3.5 0 97 100 500 12.5 25 10 0.6 4.0 3.2 0.12 0.55 0.50 CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX 450 600 10 10 60 80 13.5 -15.0 3.5 0 97 98 200 12.5 30 10 0.8 4.0 3.0 0.11 0.55 0.50 450 600 10 10 75 100 13.5 - 15.0 3.5 0 94 94 100 12.5 40 10 1.0 4.0 2.8 0.07 0.55 0.50 0.01 0.55 600 750 15 15 100 125 13.5 -15.0 3.5 0 90 86 50 12.5 50 10 1.6 86 80 25 12.5 100KRAD(Si) MIN MAX 750 900 20 20 175 200 13.5 -15.0 250 25 200KRAD(Si) MIN MAX UNITS 900 V V nA nA nA nA V V V V dB dB V/mV V mV mV V V V V/s mA mA (Post-Irradiation) Note 1: Guaranteed by design, characterization, or correlation to other tested parameters. Note 2: Specification applies for VS+ = 5V, VS- = 0V, VCM = 0V, VOUT = 1.4V. 3 RH1014M TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4,5,6 1,2,3,4,5,6 1,2,3 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT 10k 15V - 10k 8V + -15V TYPICAL PERFOR A CE CHARACTERISTICS Supply Current (Per Amplifier) 0.8 VS = 15V RL = 10k SUPPLY CURRENT (mA) Positive Slew Rate 0.8 VS = 15V RL = 10k 0.6 NEGATIVE SLEW RATE (V/s) 0.6 POSITIVE SLEW RATE (V/s) 0.4 0.4 0.2 0.2 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G01 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G02 4 UW RH1014M TDBC UW Negative Slew Rate 0.8 VS = 15V RL = 10k 0.6 0.4 0.2 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G03 RH1014M TYPICAL PERFOR A CE CHARACTERISTICS Input Offset Voltage 300 200 100 0 VS = 15V VCM = 0V 70 60 VS = 15V VCM = 0V INPUT OFFSET VOLTAGE (V) INPUT OFFSET CURRENT (nA) INPUT BIAS CURRENT (nA) -100 -200 -300 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G04 Open-Loop Gain 150 COMMON-MODE REJECTION RATIO (dB) POWER SUPPLY REJECTION RATIO (dB) 140 VS = 15V RL = 10k VOUT = 10V OPEN-LOOP GAIN (dB) 130 120 110 100 90 80 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G07 Input Noise Voltage Density 100 1000 INPUT NOISE VOLTAGE DENSITY (nV/Hz) GAIN BANDWIDTH PRODUCT (kHz) 90 80 70 60 50 40 30 20 10 0 1 VS = 15V fO = 10Hz UW Input Bias Current 3 Input Offset Current VS = 15V VCM = 0V 2 50 40 30 20 10 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G05 1 0 -1 -2 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G06 Common-Mode Rejection Ratio 150 140 130 120 110 100 90 80 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G08 Power Supply Rejection Ratio 140 VS = 10V TO 18V 130 120 110 100 90 80 70 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G09 VS = 15V -15V VCM 13.5V Gain Bandwidth Product 900 800 700 600 500 400 300 200 100 0 VS = 5V RL = 10k 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G10 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G11 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 5 RH1014M I.D. No. 66-11-1014 Rev. F 0503 6 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 LT/HP 0503 500 REV F * PRINTED IN USA www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 1990 |
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